42013-02-13www.fritzing.org<b>PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR</b>
<p>
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging
optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter.
<p>Datasheet: http://www.sparkfun.com/datasheets/Sensors/QRB1114.pdf
<p>MAX RATINGS:
<p>EMITTER
<br>Continuous Forward Current (IF) 50 mA
<br>Reverse Voltage (VR) 5 V
<br>Power Dissipation (PD) 100 mW
<p>SENSOR
<br>Collector-Emitter Voltage (VCEO) 30 V
<br>Emitter-Collector Voltage (VECO) 4.5 V
<br>Collector Current 20 mA
<br>Power Dissipation (PD) 100 mWPHOTOTRANSISTOR REFLECTIVE OBJECT SENSORQRB1114QRB1114-SIDEqrb1114-sidesparkfun Reflective Object SensorACEK